- On request
GT50J325
$ 13,13
Sem imposto
GT50J325
Política de seguridad
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Features
Silicon N Channel IGBT
The 4th generation
Enhancement-mode
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed : tf=0.05uS (typ)
Low switching loss: Eon = 1.30 mJ (typ)
Eoff = 1.34 mJ (typ)
Low saturation Voltage: VCE (sat) = 2.0 V (typ)
FRD included between emitter and collector
Aplications
Applications
High Power Switching
Fast Switching
GT50J325
Referências específicas
- MPN
- GT50J325
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