- On request
IXFH35N30
$ 1,31
Sem imposto
IXFH35N30
Política de seguridad
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Features
HiPerFET Power MOSFET
International Stu00c3u00a1ndar ackage
Low RDS(on) HDMOS process
Rugged polysilicon gate cell structure
Unclamped inductive Switching (UIS) rated
Low package inductance-easy to drive and protect
Fast intrinsic Rectifier
Aplications
Aplications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonat-mode power supplies
AC motor control
DC choppers
Temperature and lighting controls
Low voltage relays
IXFH35N30
Referências específicas
- MPN
- IXFH35N30
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