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Silicon N Channel MOS Transistor
Low drain-source ON resistance : RDS(ON) = 0.75 Ohms (typ.)
High forward transfer admittance : YFS = 7.0 S (typ.)
Low leakage current : IDSS = 100uA(max) (VDS = 500 V)
Enhancement-mode : Vth = 2.0 - 4.0 V (VDS = 10 V, ID = 1 mA)
Applications
Switching Regulator
Miscellaneous
2SK2543
Semiconductor