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MOS FIELD EFFECT TRANSISTOR
Low gate charge
Qg = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A )
Gate voltage rating +/- 30 V
Low on-state resistance
RDS(on) = 0.60 Ohms MAX. (@ VGS = 10 V, ID = 6.0 A)
Avalanche capability rating
Surface mount package available
Semiconductors High Power Equipment Repair