- On request
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(Envíos de 1-2 días hábiles para productos de stock)
Field Effect Transistor
Small footprint due to a small and thin package
High-speed switching
Small gate charge : QSW = 2.0 nC (typ.)
Low Drain-source ON-resistance : RDS(ON) = 130 mOhms (typ)
High forward transfer admittance : Yfs = 5.4 S (typ)
Low Leakage current IDSS = 10 uA (max) (VDS = 100 V)
Enhancement mode : Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Applications
High - Efficiency DC / DC Converter
CCFL Inverters