- On request
K40J60T
$ 7,88
Sem imposto
K40J60T
Política de seguridad
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Features
Silicon N Channel MOS
Low drain-source ON-resistance : RDS(ON)= 0.068 Ohms (typ)
High forward transfer admittance Yfs = 25 S (typ)
Low leakage current : IDSS = 100 uA (VDS = 600 V)
Enhancement-mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1mA)
Aplications
Applications
Switching Regulator
K40J60T
Referências específicas
- MPN
- K40J60T
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