- On request
TC74HC4515P
$ 7,88
Sem imposto
TC74HC4515P
Política de seguridad
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Features
Power Field Effect Transistor
Features
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast recovery DiodeDiode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevared temperature
Aplications
Semiconductors High Power Equipment Repair
TC74HC4515P
Referências específicas
- MPN
- TC74HC4515P
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