- On request
MG200N1US1
105,00 $
steuerfrei
MODULOS IGBT DE CANAL N
Última actualización
MG200N1US1200A/1000V/1U
No Identificado
Delivery time :
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Features
SILICON N CHANNEL IGBT MODULE
High Input Impedance
High Speed : tf=1.0 us (Max.) trr=0.5us(Max.)
Low Saturation Voltage : VCE(sat)=5.0 V (Max.)
Enhancement-Mode
The Electrodes are Isolated from Case
Aplications
Aplications
High Powewr Switching
Motor Control
MG200N1US1
Besondere Bestellnummern
- Hersteller-Teilenummer (MPN)
- MG200N1US1
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MODULOS IGBT DE CANAL N
Última actualización
200A/1000V/1U
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