• On request
MG200N1US1
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  • MG200N1US1

MG200N1US1

$105.00
No tax

MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG200N1US1

200A/1000V/1U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON N CHANNEL IGBT MODULE

High Input Impedance

High Speed : tf=1.0 us (Max.) trr=0.5us(Max.)

Low Saturation Voltage : VCE(sat)=5.0 V (Max.)

Enhancement-Mode

The Electrodes are Isolated from Case

Aplications

Aplications

High Powewr Switching

Motor Control

MG200N1US1

Specific References

MPN
MG200N1US1
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