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MG75Q2YS50
$53.92
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MODULOS IGBT DE CANAL N
Última actualización
MG75Q2YS5075A/1200V/2U
No Identificado
Delivery time :
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Features
SILICON N CHANNEL IGBT MODULE
High input impedance
High speed :
tf = 0.3us (Max.) @ Inductive load
Low saturation voltage :
VCE(sat) = 3.6 V (Max.)
Enhancement-mode
Includes a complete half bridge in
one package
The electrodes are Isolated
from case
Aplications
Applications
High Power Switching
Motor Control
Toshiba * Transistor
Toshiba
MG75Q2YS50
IGBT 75A 1200V DUAL
MG75Q2YS50
Specific References
- MPN
- MG75Q2YS50
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MODULOS IGBT DE CANAL N
Última actualización
75A/1200V/2U
No Identificado
Delivery time :