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MG200J2YS50
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  • MG200J2YS50

MG200J2YS50

$73.64
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MODULOS IGBT DE CANAL N

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DatasheetMG200J2YS50

200A/600V/2U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON N CHANNEL IGBT MODULE

The Electrodes are Isolated from Case

High Input Impedance

Includes a Complete Half Bridge in

One Package

Enhancement-Mode

High Speed :

tf=0.30us (Max.) (IC = 200A)

trr=0.15us (Max.) (IF = 200A)

Low Saturation Voltage :

VCE(sat)=2.70V (Max.) (IC =200A)

Aplications

Applications

High Power Switching

Motor Control

Toshiba * Transistor

Toshiba

MG200J2YS50

IGBT 200A 600V DUAL

MG200J2YS50

Specific References

MPN
MG200J2YS50
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