- On request
MG600Q1US51
$133.88
No tax
MODULOS IGBT DE CANAL N
Última actualización
MG600Q1US51600A/1200V/1U
No Identificado
Delivery time :
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Política de entrega
(Delivery 1-2 days for products in stock)
Features
SILICON N CHANNEL IGBT MODULE
High input impedance
High speed :
tf=0.3us (Max.) @ Inductive load
Low saturation voltage :
VCE(sat) = 3.6 V (Max.)
Enhancement-mode
Includes a complete half bridge in
one package
The electrodes are isolated from case
Aplications
Applications
High Power Switching
Motor Control
Toshiba * Transistor
Toshiba
MG600Q1US51
IGBT 600A 1200V SINGLE
MG600Q1US51
Specific References
- MPN
- MG600Q1US51
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MODULOS IGBT DE CANAL N
Última actualización
600A/1200V/1U
No Identificado
Delivery time :