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MG600Q1US51
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  • MG600Q1US51

MG600Q1US51

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MODULOS IGBT DE CANAL N

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DatasheetMG600Q1US51

600A/1200V/1U

No identificado

Delivery time :

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON N CHANNEL IGBT MODULE
  • High input impedance
  • High speed :
  • tf=0.3us (Max.) @ Inductive load
  • Low saturation voltage :
  • VCE(sat) = 3.6 V (Max.)
  • Enhancement-mode
  • Includes a complete half bridge in
  • one package
  • The electrodes are isolated from case

Aplications

  • Applications
  • High Power Switching
  • Motor Control

Toshiba * Transistor

Toshiba

MG600Q1US51

IGBT 600A 1200V SINGLE

MG600Q1US51

Specific References

MPN
MG600Q1US51
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