- On request
MODULOS IGBT DE CANAL N
Última actualización
100A/1200V/2U
No Identificado
Delivery time :
(Our products have limited warranty, please check our terms)
(Delivery 1-2 days for products in stock)
SILICON N CHANNEL IGBT MODULE
The Electrodes are Isolated from Case
High Input Impedance
Enhancement-Mode
High Speed :
tf=0.5us (Max.)
trr=0.5us (Max.)
Low Saturation Voltage :
VCE(sat) = 4.0V (Max.)
Includes a Complete Half Bridge in
One Package
Applications
High Power Switching
Motor Control
Toshiba
MG100Q2YS40
IGBT 100A 1200V DUAL