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MG200Q2YS65H
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  • MG200Q2YS65H

MG200Q2YS65H

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MODULOS IGBT DE CANAL N

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DatasheetMG200Q2YS65H

200A/1200V/2U

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Delivery time :

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON N CHANNEL IGBT MODULE
  • High Input Impedance
  • High Speed :
  • tf=0.3us (Max.) @ Inductive Load
  • Low Saturation Voltage :
  • VCE(sat) = 3.6V (Max.)
  • Enhancement-Mode
  • The Electrodes are Isolated from Case

Aplications

  • Applications
  • High Power Switching
  • Motor Control
MG200Q2YS65H

Specific References

MPN
MG200Q2YS65H
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