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MG200Q2YS65H
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  • MG200Q2YS65H

MG200Q2YS65H

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MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG200Q2YS65H

200A/1200V/2U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON N CHANNEL IGBT MODULE

High Input Impedance

High Speed :

tf=0.3us (Max.) @ Inductive Load

Low Saturation Voltage :

VCE(sat) = 3.6V (Max.)

Enhancement-Mode

The Electrodes are Isolated from Case

Aplications

Applications

High Power Switching

Motor Control

MG200Q2YS65H

Specific References

MPN
MG200Q2YS65H
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