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MG200Q2YS65H
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MODULOS IGBT DE CANAL N
Última actualización
MG200Q2YS65H200A/1200V/2U
No Identificado
Delivery time :
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Features
SILICON N CHANNEL IGBT MODULE
High Input Impedance
High Speed :
tf=0.3us (Max.) @ Inductive Load
Low Saturation Voltage :
VCE(sat) = 3.6V (Max.)
Enhancement-Mode
The Electrodes are Isolated from Case
Aplications
Applications
High Power Switching
Motor Control
MG200Q2YS65H
Referências específicas
- MPN
- MG200Q2YS65H
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MODULOS IGBT DE CANAL N
Última actualización
200A/1200V/2U
No Identificado
Delivery time :