• On request
MG50M2CK1
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  • MG50M2CK1

MG50M2CK1

$47.25
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MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG50M2CK1

50A/1000V/2H

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON NPN TRIPLE DIFFUSED GTR MODULE

Feartures

The Collector is Isolated from Case

2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package

High DC Current Gain : hFE=100 (min,) (IC=50A)

Low Saturation Voltage : VCE(sat)=2.5V (Max.) (IC=50A)

Aplications

Applications

HIGH POWER SWITCHING

MOTOR CONTROL

Toshiba * Transistor

Toshiba

MG50M2CK1

TRANSISTOR

MG50M2CK1

Specific References

MPN
MG50M2CK1
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