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MG50M2CK1
47,25 $
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MODULOS IGBT DE CANAL N
Última actualización
MG50M2CK150A/1000V/2H
No Identificado
Delivery time :
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Features
SILICON NPN TRIPLE DIFFUSED GTR MODULE
Feartures
The Collector is Isolated from Case
2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package
High DC Current Gain : hFE=100 (min,) (IC=50A)
Low Saturation Voltage : VCE(sat)=2.5V (Max.) (IC=50A)
Aplications
Applications
HIGH POWER SWITCHING
MOTOR CONTROL
Toshiba * Transistor
Toshiba
MG50M2CK1
TRANSISTOR
MG50M2CK1
Riferimenti Specifici
- MPN
- MG50M2CK1
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MODULOS IGBT DE CANAL N
Última actualización
50A/1000V/2H
No Identificado
Delivery time :