- On request
MODULOS IGBT DE CANAL N
Última actualización
100A/1200V/2U
No Identificado
Delivery time :
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SILICON N CHANNEL IGBT MODULE
The Electrodes are Isolated from Case
High Input Impedance
Enhancement-Mode
High Speed :
tf=0.5us (Max.)
trr=0.5us (Max.)
Low Saturation Voltage :
VCE(sat) = 4.0V (Max.)
Includes a Complete Half Bridge in
One Package
Applications
High Power Switching
Motor Control
Toshiba
MG100Q2YS40
IGBT 100A 1200V DUAL