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MG300Q1US1
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MG300Q1US1

$94.68
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MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG300Q1US1

300A/1200V/1U

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Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON N CHANNEL IGBT MODULE

High input impedance

High speed :

tf= 1.0us (Max.) trr=0.5us (Max.)

Low saturation voltage :

VCE(sat) = 2.7V (Max.)

Enhancement mode

The electrodes are isolated from case

Aplications

Applications

High Power Switching

Motor Control

Toshiba * Transistor

Toshiba

MG300Q1US1

IGBT 300A 1200V SINGLE

MG300Q1US1

Specific References

MPN
MG300Q1US1
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