• On request
MG150J1BS11
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  • MG150J1BS11

MG150J1BS11

$47.34
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MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG150J1BS11

150A/600V/1U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON N CHANNEL IGBT MODULE

High Input Impedance

High Speed :

tf=1.0us (Max.) (IC=150A)

Low Saturation Voltage :

VCE(sat)=2.7V (Max.) (IC=150A)

Enhancement-Mode

The Electrodes are Isolated from Case

Aplications

Applications

High Power Switching

Motor Control

Toshiba * Transistor

Toshiba

MG150J1BS11

IGBT 150A 600V SINGLE

MG150J1BS11

Specific References

MPN
MG150J1BS11
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