- On request
MG150J1BS11
47,34 $
steuerfrei
MODULOS IGBT DE CANAL N
Última actualización
MG150J1BS11150A/600V/1U
No Identificado
Delivery time :
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Features
SILICON N CHANNEL IGBT MODULE
High Input Impedance
High Speed :
tf=1.0us (Max.) (IC=150A)
Low Saturation Voltage :
VCE(sat)=2.7V (Max.) (IC=150A)
Enhancement-Mode
The Electrodes are Isolated from Case
Aplications
Applications
High Power Switching
Motor Control
Toshiba * Transistor
Toshiba
MG150J1BS11
IGBT 150A 600V SINGLE
MG150J1BS11
Besondere Bestellnummern
- Hersteller-Teilenummer (MPN)
- MG150J1BS11
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MODULOS IGBT DE CANAL N
Última actualización
150A/600V/1U
No Identificado
Delivery time :