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MG100J6ES91
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  • MG100J6ES91

MG100J6ES91

$105.00
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MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG100J6ES91

100A/600V/6U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON N CHANNEL IGBT MODULE

The Electrodes are Isolated from Case

High Input Impedance

6 IGBTs Built Into 1 Package

Enhancement-Mode

High Speed :

tf=0.30us (Max.) (IC = 100 A)

trr=0.15us (Max.) (IF = 100A)

Low Saturation Voltage :

VCE(sat) = 2.70V (Max.) (IC = 100 A)

Aplications

Semiconductors High Power Equipment Repair

MG100J6ES91

Specific References

MPN
MG100J6ES91
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