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MG15Q6ES50A
$118.13
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MODULOS IGBT DE CANAL N
Última actualización
MG15Q6ES50A15A/1200V/6U
No Identificado
Delivery time :
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Política de entrega
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Features
SILICON N CHANNEL IGBT MODULE
The Electrodes are Isolated from Case
6 IGBTs Built Into 1 Package
Enhancemment-Mode
Low Saturation Voltage
VCE(sat) = 4.0V (Max.)
High Speed :
tf=0.5us(Max.)
trr=0.5us(Max.)
Aplications
Semiconductors High Power Equipment Repair
Toshiba * Transistor
Toshiba
MG15Q6ES50A
IGBT, SIX-PACK, 1200V, 15A, LONGPIN
MG15Q6ES50A
Specific References
- MPN
- MG15Q6ES50A
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MODULOS IGBT DE CANAL N
Última actualización
15A/1200V/6U
No Identificado
Delivery time :