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MG100Q2YS50
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  • MG100Q2YS50
  • MG100Q2YS50
  • MG100Q2YS50

MG100Q2YS50

$80.50
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MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG100Q2YS50

100A/1200V/2U

No identificado

Delivery time : 1-2 semanas.

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON N CHANNEL IGBT MODULE
  • The Electrodes are Isolated from Case
  • High Input Impedance
  • Enhancement-Mode
  • High Speed :
  • tf=0.3us (Max.) @ Inductive Load
  • Low Saturation Voltage :
  • VCE(sat) = 3.6 V (Max.)
  • Includes a Complete Half Bridge in
  • One Package

Aplications

  • Applications
  • High Power Switching
  • Motor Control

Toshiba * Transistor

Toshiba

MG100Q2YS50

IGBT 100A 1200V DUAL

MG100Q2YS50

Specific References

MPN
MG100Q2YS50
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