• On request
MG100Q2YS50
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  • MG100Q2YS50
  • MG100Q2YS50

MG100Q2YS50

$80.50
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MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG100Q2YS50

100A/1200V/2U

TOSHIBA

Delivery time : 1-2 semanas.

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON N CHANNEL IGBT MODULE

The Electrodes are Isolated from Case

High Input Impedance

Enhancement-Mode

High Speed :

tf=0.3us (Max.) @ Inductive Load

Low Saturation Voltage :

VCE(sat) = 3.6 V (Max.)

Includes a Complete Half Bridge in

One Package

Aplications

Applications

High Power Switching

Motor Control

Toshiba * Transistor

Toshiba

MG100Q2YS50

IGBT 100A 1200V DUAL

MG100Q2YS50

Specific References

MPN
MG100Q2YS50
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