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MG30G6EL2
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MODULOS IGBT DE CANAL N
Última actualización
MG30G6EL230A/600V/6U
No Identificado
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Features
SILICON NPN TRIPLE DIFFUSED IGBT MODULE
The Collector is Isolated from Ground
6 Power Transistors and 6 Free Wheeling Diodes are Built Into
1 PackageHigh
DC Current Gain :
hfe = 100(Min.) (IC=30A)
Low Saturation Voltage:
VCE(sat)=2V (Max.) (IC=30A)
High Speed : tf=2us (Max.) (IC=30A)
Aplications
Applications
High Power Switching
Motor Control
MG30G6EL2
Specific References
- MPN
- MG30G6EL2
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