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MG30G6EL2
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MG30G6EL2

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MODULOS IGBT DE CANAL N

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DatasheetMG30G6EL2

30A/600V/6U

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Delivery time :

Quantità
On request

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Features

SILICON NPN TRIPLE DIFFUSED IGBT MODULE

The Collector is Isolated from Ground

6 Power Transistors and 6 Free Wheeling Diodes are Built Into

1 PackageHigh

DC Current Gain :

hfe = 100(Min.) (IC=30A)

Low Saturation Voltage:

VCE(sat)=2V (Max.) (IC=30A)

High Speed : tf=2us (Max.) (IC=30A)

Aplications

Applications

High Power Switching

Motor Control

MG30G6EL2

Riferimenti Specifici

MPN
MG30G6EL2
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