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MP6801
$15.75
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MODULOS IGBT DE CANAL N
Última actualización
MP680110A/60V/6U
No Identificado
Delivery time :
Política de seguridad
(Our products have limited warranty, please check our terms)
Política de entrega
(Delivery 1-2 days for products in stock)
Features
SILICON N & P CHANNEL MOS FET
4 Volt Gate Drive
Package with Heat Sink Isolated to Lead (SIP 12 pin)
High Drain Power Dissipation.
PT = 40 W @ Tc = 25 C (6 Device Operation)
Low Drain-Source ON Resistance :
RDS (ON) = 55mOhms (Typ) (N-ch)
90mOhms (Typ) (P-ch)
Low Leakage Current :
IGSS = +- 10uA (Max) @ VDS = +- 16V
IDSS = 100uA (Max) @ VDS = 60V
Enhancement Mode :
Vth = 0.8 - 2.0V @ ID = 1mA
Aplications
Semiconductors High Power Equipment Repair
MP6801
Specific References
- MPN
- MP6801
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MODULOS IGBT DE CANAL N
Última actualización
10A/60V/6U
No Identificado
Delivery time :