- On request
MODULOS IGBT DE CANAL N
Última actualización
100A/600V/2U
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Delivery time :
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SILICON N CHANNEL IGBT MODULE
The electrodes are isolated from case
High input impedance
Includes a complete half bridge in
one package
Enahancement-mode
High speed :
tf=0.30us (Max.) (IC = 100A)
trr =0.15us (Max.) (IF = 100A)
low saturation voltage :
VCE(sat)=2.70V (Max.) (IC=100A)
Applications
High Power Switching
Motor Control
Powerex
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