- On request
MG100Q2YS50
80,50 $
Nessuna tassa
MODULOS IGBT DE CANAL N
Última actualización
MG100Q2YS50100A/1200V/2U
TOSHIBA
Delivery time : 1-2 semanas.
Política de seguridad
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Shipping and Returns
All products come with a warranty against manufacturing defects.
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Features
SILICON N CHANNEL IGBT MODULE
The Electrodes are Isolated from Case
High Input Impedance
Enhancement-Mode
High Speed :
tf=0.3us (Max.) @ Inductive Load
Low Saturation Voltage :
VCE(sat) = 3.6 V (Max.)
Includes a Complete Half Bridge in
One Package
Aplications
Applications
High Power Switching
Motor Control
Toshiba * Transistor
Toshiba
MG100Q2YS50
IGBT 100A 1200V DUAL
MG100Q2YS50
Riferimenti Specifici
- MPN
- MG100Q2YS50
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16 altri prodotti della stessa categoria:
MODULOS IGBT DE CANAL N
Última actualización
100A/1200V/2U
TOSHIBA
Delivery time : 1-2 semanas.