• On request

MG50Q6ES11

157,50 $
Nessuna tassa

MODULOS IGBT DE CANAL N

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DatasheetMG50Q6ES11

50A/1200V/6U

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Delivery time :

Quantità
On request

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Features

SILICON N CHANNEL IGBT MODULE

The Electrodes are Isolated from Case

6 IGBTs are Built Into 1 Package

Enhancement-Mode

Low Saturation Voltage :

VCE(sat) = 4.0V (Max.)

High Speed :

tf = 0.5us (Max.)

Aplications

Semiconductors High Power Equipment Repair

MG50Q6ES11

Riferimenti Specifici

MPN
MG50Q6ES11
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