• On request

MG50Q6ES11

$157.50
No tax

MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG50Q6ES11

50A/1200V/6U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON N CHANNEL IGBT MODULE

The Electrodes are Isolated from Case

6 IGBTs are Built Into 1 Package

Enhancement-Mode

Low Saturation Voltage :

VCE(sat) = 4.0V (Max.)

High Speed :

tf = 0.5us (Max.)

Aplications

Semiconductors High Power Equipment Repair

MG50Q6ES11

Specific References

MPN
MG50Q6ES11
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