- On request
MODULOS IGBT DE CANAL N
Última actualización
25A/1000V/2U
No Identificado
Delivery time :
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(Delivery 1-2 days for products in stock)
SILICON N CHANNEL IGBT
High Input Impedance
High Speed : tf=1.0us(Max.)
trr=0.5us(Max.)
Low Saturation Voltage : VCE(sat)=5.0V (Max.)
Enhancement-Mode
Includes a Complete Half Bridge in one Package
The Electrodes are Isolated from Case.
Applications
High Power Switching
Motor Control