• On request
MG25N2YS1
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  • MG25N2YS1

MG25N2YS1

$102.38
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MODULOS IGBT DE CANAL N

Última actualización

DatasheetMG25N2YS1

25A/1000V/2U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON N CHANNEL IGBT

High Input Impedance

High Speed : tf=1.0us(Max.)

trr=0.5us(Max.)

Low Saturation Voltage : VCE(sat)=5.0V (Max.)

Enhancement-Mode

Includes a Complete Half Bridge in one Package

The Electrodes are Isolated from Case.

Aplications

Applications

High Power Switching

Motor Control

MG25N2YS1

Specific References

MPN
MG25N2YS1
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