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MG30G1BL2
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MODULOS IGBT DE CANAL N
Última actualización
MG30G1BL230A/600V/1U
No Identificado
Delivery time :
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Features
SILICON NPN TRIPLE DIFFUSED IGBT MODULE
The Collector is Isolated from Ground
High DC Current Gain :
hfe = 100(Min.) (IC=30A)
Low Saturation Voltage:
VCE(sat)=2V (Max.) (IC=30A)
High Speed : tf=2us (Max.) (IC=30A)
Aplications
Applications
High Power Switching
Toshiba * Transistor
Toshiba
MG30G1BL2
TRANSISTOR 30A 400V SINGLE
MG30G1BL2
Specific References
- MPN
- MG30G1BL2
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MODULOS IGBT DE CANAL N
Última actualización
30A/600V/1U
No Identificado
Delivery time :