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MG50Q2YS91
$65.63
No tax
MODULOS IGBT DE CANAL N
Última actualización
MG50Q2YS9150A/1200V/2U
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Features
SILICON N CHANNEL IGBT GTR MODULE
High input impedance
High speed : tf = 1.0 us(Max.)
trr = 0.5 us (Max.)
Low saturation : VCE(sat) = 2.7 V (Max.)
Enhancement mode
The electrodes are isolated from case
Includes a complete half bridge card in one package
Aplications
Semiconductors High Power Equipment Repair
MG50Q2YS91
Specific References
- MPN
- MG50Q2YS91
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MODULOS IGBT DE CANAL N
Última actualización
50A/1200V/2U
No Identificado
Delivery time :