- On request
MG50Q2YS40
$57.75
No tax
MODULOS IGBT DE CANAL N
Última actualización
MG50Q2YS4050A/1200V/2U
No Identificado
Delivery time :
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Features
SILICON N CHANNEL IGBT MODULE
The Electrodes are Isolated from Case
High Input Impedance
Included a Complete Half Bridge in
One Package
Enhancement -Mode
High Speed :
tf=0.5us (Max.)
trr=0.5us (Max.)
Low Saturation Voltage :
VCE(sat)= 4.0V (Max.)
Aplications
Applications
High Power Switching
Motor Control
Toshiba Transistor Module
Toshiba
MG50Q2YS40
IGBT 50A 1200V DUAL
MG50Q2YS40
Specific References
- MPN
- MG50Q2YS40
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MODULOS IGBT DE CANAL N
Última actualización
50A/1200V/2U
No Identificado
Delivery time :