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MG30G1BL3
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MG30G1BL3

$31.50
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MODULOS IGBT DE CANAL N

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DatasheetMG30G1BL3

30A/600V/1U

No identificado

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Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON NPN TRIPLE DIFFUSED IGBT MODULE
  • The Collector is Isolated from Ground
  • High DC Current Gain :
  • hfe = 100(Min.) (IC=30A)
  • Low Saturation Voltage:
  • VCE(sat)=2V (Max.) (IC=30A)
  • High Speed : tf=2us (Max.) (IC=30A)

Aplications

  • Semiconductors High Power Equipment Repair

Toshiba * Transistor

Toshiba

MG30G1BL3

TRANSISTOR 30A 450V SINGLE

MG30G1BL3

Specific References

MPN
MG30G1BL3
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