- On request
2SB507
2,63 $
steuerfrei
2SB507
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Features
Silicon PNP Power Transistor
Low Collector-Emitter Saturation Voltage
VCE(sat)= 1.o V (max.) @ IC=2.0 A, IB=0.2A
DC Current Gain
hfe=40-320 @ IC=1.0A
Complementary to NPN 2SD313
Aplications
Semiconductors High Power Equipment Repair
2SB507
Besondere Bestellnummern
- Hersteller-Teilenummer (MPN)
- 2SB507
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