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Silicon N Channel IGBT
Fourth-generation IGBT
Enhancement mode type
Fast switching (FS) : Operating frequency up tp 50 kHz (reference)
High speed : tf = 0.04 us (Typ.)
Low switching loss : Eon = 0.40 mJ (typ.)
: Eoff = 0.43 mJ (typ.)
Low saturation voltage : VCE(sat) = 2.0 V (typ.)
FRD included between emitter and collector
Applications
High Power Switching
Fast switching