Features
- IGBT POWER MODULE
- Low Vce(sat) trench IGBT technology
- Low switching losses
- Maximum juntion temperature 175 C
- 5us short circuit capability
- Square RBSOA
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Aplications
- Applications
- AC inverterdrives
- Switchhing mode power supplies
- Electronic welders
GD200HFT60C8S
Besondere Bestellnummern
- Hersteller-Teilenummer (MPN)
- GD200HFT60C8S