- On request
(Los productos cuentan con garantía limitada, por favor revisa nuestras condiciones)
(Envíos de 1-2 días hábiles para productos de stock)
Silicon N Channel MOS Type
Small footprint due to small and thin package
Low drain-source ON resistance : RDS(ON)= 40mOhms (typ.)
Hogh forward transfer admittance : Yfs = 7.0 S (typ.)
Low leakage current : IDSS = 10 uA (max) (VDS = 60 V)
Enhancement-mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Applications
Lithium Ion Battery
Notebook PC
Poprtable Equipment