- On request
(Our products have limited warranty, please check our terms)
(Delivery 1-2 days for products in stock)
Silicon N Channel MOS Type
Small footprint due to small and thin package
Low drain-source ON resistance : RDS(ON)= 40mOhms (typ.)
Hogh forward transfer admittance : Yfs = 7.0 S (typ.)
Low leakage current : IDSS = 10 uA (max) (VDS = 60 V)
Enhancement-mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Applications
Lithium Ion Battery
Notebook PC
Poprtable Equipment