• On request

DP10F1200102400

$94.50
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IGBT - PIM

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DatasheetDP10F1200102400

11.4A/200V/1U

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Quantity
On request

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(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

N-Channel MOSFET

RDS(ON) (Max 0.18 Ohms)@Vgs = 10 V

Gate Charge (Typical 45nC)

Improved dv/dt Capability, High Ruggedness

100 % Avalanche tested

Maximun Juntion Temperature range (150C)

Aplications

Semiconductors High Power Equipment Repair

DP10F1200102400

Specific References

MPN
DP10F1200102400
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