- On request
DP10F1200102400
$94.50
No tax
IGBT - PIM
Última actualización
DP10F120010240011.4A/200V/1U
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Features
N-Channel MOSFET
RDS(ON) (Max 0.18 Ohms)@Vgs = 10 V
Gate Charge (Typical 45nC)
Improved dv/dt Capability, High Ruggedness
100 % Avalanche tested
Maximun Juntion Temperature range (150C)
Aplications
Semiconductors High Power Equipment Repair
DP10F1200102400
Specific References
- MPN
- DP10F1200102400
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