• On request
GT60M323
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  • GT60M323

GT60M323

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DatasheetGT60M323

31A/900V/1U

No Identificado

Delivery time :

Quantity
On request

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

SILICON N CHANNEL IGBT

Fearures

Enhancement-Mode type

High Speed : tf=0.09us (typ.) (Ic=60A)

Low Saturation Voltage : VCE(sat) = 2.3V (typ.) (Ic = 60A)

FRD included between Emitter and Collector

TO-3P(LH) (Toshiba package name)

Aplications

Semiconductors High Power Equipment Repair

Toshiba Semiconductor

Toshiba

GT60M323

Semiconductor

GT60M323

Specific References

MPN
GT60M323
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