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SILICON N CHANNEL IGBT
Fearures
Enhancement-Mode type
High Speed : tf=0.09us (typ.) (Ic=60A)
Low Saturation Voltage : VCE(sat) = 2.3V (typ.) (Ic = 60A)
FRD included between Emitter and Collector
TO-3P(LH) (Toshiba package name)
Semiconductors High Power Equipment Repair
Toshiba
GT60M323
Semiconductor