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GT60M323
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  • GT60M323

GT60M323

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DatasheetGT60M323

31A/900V/1U

No identificado

Delivery time :

Quantity
Out-of-Stock

  Política de seguridad

(Our products have limited warranty, please check our terms)

  Política de entrega

(Delivery 1-2 days for products in stock)

Features

  • SILICON N CHANNEL IGBT
  • Fearures
  • Enhancement-Mode type
  • High Speed : tf=0.09us (typ.) (Ic=60A)
  • Low Saturation Voltage : VCE(sat) = 2.3V (typ.) (Ic = 60A)
  • FRD included between Emitter and Collector
  • TO-3P(LH) (Toshiba package name)

Aplications

  • Semiconductors High Power Equipment Repair

Toshiba Semiconductor

Toshiba

GT60M323

Semiconductor

GT60M323

Specific References

MPN
GT60M323
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