- On request
(Our products have limited warranty, please check our terms)
(Delivery 1-2 days for products in stock)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Fast Optimized for medium operating
frequencies ( 1 - 5 kHz in hard switching, >20
kHz in resonant mode)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
than Generation 3
IGBT co-packaged with HEXFRED ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
Industry standar TO-247AC package
Semiconductors High Power Equipment Repair