- On request
IRG4PC50FD
5,25 $
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IRG4PC50FD
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Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Fast Optimized for medium operating
frequencies ( 1 - 5 kHz in hard switching, >20
kHz in resonant mode)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
than Generation 3
IGBT co-packaged with HEXFRED ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
Industry standar TO-247AC package
Aplications
Semiconductors High Power Equipment Repair
IRG4PC50FD
Références spécifiques
- MPN
- IRG4PC50FD
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