- On request
MP6753
$52.50
No tax
MP6753
Política de seguridad
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Features
INSULATED GATE BIPOLAR TRANSISTOR MODULE
The Electrodes are isolated from Case
6 IGBTs are Built Into 1 Package
Enhancement-Mode
Low Saturation Voltage :
VCE(sat) = 2.7 V (Max.) (IC = 20A)
High Speed :
tf = 1.0us (Max.) (IC = 20A)
trr = 0.15us (Max.) (IF = 20A)
Aplications
Applications
High Power Switching
Toshiba * Transistor
Toshiba
MP6753
IGBT 20A 600V SIX-PACK SIP
MP6753
Specific References
- MPN
- MP6753
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