- On request
SKM200GB124D
$107.83
No tax
SKM200GB124D
Política de seguridad
(Our products have limited warranty, please check our terms)
Política de entrega
(Delivery 1-2 days for products in stock)
Features
Low Loss IGBT MODULE
MOS input (voltage controlled)
N channel, homogeneous Silicon structure NPT-IGBT (Non punch through)
Low saturation voltage
Low inductance case
Low tail current with low temperature
dependence
High short circuit capability, self
limiting to 6 Icnom
Latch-up free
Fast & soft inverse CAL diodes
Isolated copper baseplate using DCB
Direct Copper BondingTechnology
without hard mould
Large clearance (12mm) and creepage
distances (20mm)
Aplications
Applications
Switching ( not for linear use )
Inverters drive
Semikron IGBTs
Semikron
SKM200GB124D
IGBT 200A 1200V DUAL ; Type; Dual
Vces; 1200 Volts DC
Ic; 200 Amps
Vges +/-; 20
Ices Max; 0.3 MilliAmps
Vge(th) Min/Max; 4.5~6.5 Volts
Vce(sat) Max; 2.45 Volts
Height (mm); 30.5
Width (mm); 106.4
Depth (mm); 61.4
RoHS; Yes ;
SKM200GB124D
Specific References
- MPN
- SKM200GB124D
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