- Esgotado
SKM200GB124D
$ 107,83
Sem imposto
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Política de entrega
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Features
- Low Loss IGBT MODULE
- MOS input (voltage controlled)
- N channel, homogeneous Silicon structure NPT-IGBT (Non punch through)
- Low saturation voltage
- Low inductance case
- Low tail current with low temperature
- dependence
- High short circuit capability, self
- limiting to 6 Icnom
- Latch-up free
- Fast & soft inverse CAL diodes
- Isolated copper baseplate using DCB
- Direct Copper BondingTechnology
- without hard mould
- Large clearance (12mm) and creepage
- distances (20mm)
Aplications
- Applications
- Switching ( not for linear use )
- Inverters drive
Semikron IGBTs
Semikron
SKM200GB124D
IGBT 200A 1200V DUAL ; Type; Dual
Vces; 1200 Volts DC
Ic; 200 Amps
Vges +/-; 20
Ices Max; 0.3 MilliAmps
Vge(th) Min/Max; 4.5~6.5 Volts
Vce(sat) Max; 2.45 Volts
Height (mm); 30.5
Width (mm); 106.4
Depth (mm); 61.4
RoHS; Yes ;
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