Features
- Insulated Gate Bipolar Transistor
 - with Ultrafast Soft Recovery Diode
 - Low VCE(on) and switching losses
 - Square RBSOA and maximun juntion temperature 175 C
 - Positive VCE(ON) temperature coefficient
 - 5 us Short Circuit SOA
 - Lead-Free, RoHS Compliant
 - High efficiency in a wide range of applications switching
 - Improved realibility due to rugged hard switching performance and high power capability
 - Excellent current sharing in parallel operation
 - Enables short circuit protection schema
 - Enviromentally friendly
 
Aplications
- Applications
 - Industrial Motor Drive
 - Inverters
 - Welding
 
 
 
                   
                  
                 
                   
  
          
              
        
        SKIIP12NAB066V1
      
      
  
      
  
    
      
    
  
  
      
    
          
        Specific References
          
                          - MPN
 
              - SKIIP12NAB066V1