Features
- Insulated Gate Bipolar Transistor
- with Ultrafast Soft Recovery Diode
- Low VCE(on) and switching losses
- Square RBSOA and maximun juntion temperature 175 C
- Positive VCE(ON) temperature coefficient
- 5 us Short Circuit SOA
- Lead-Free, RoHS Compliant
- High efficiency in a wide range of applications switching
- Improved realibility due to rugged hard switching performance and high power capability
- Excellent current sharing in parallel operation
- Enables short circuit protection schema
- Enviromentally friendly
Aplications
- Applications
- Industrial Motor Drive
- Inverters
- Welding
SKIIP12NAB066V1
Referencias específicas
- MPN
- SKIIP12NAB066V1